DocumentCode
1437458
Title
Space Radiation Effects and Reliability Considerations for Micro- and Optoelectronic Devices
Author
Johnston, Allan H.
Author_Institution
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Volume
10
Issue
4
fYear
2010
Firstpage
449
Lastpage
459
Abstract
The interplay between radiation effects and reliability is discussed for micro- and optoelectronic devices. Topics discussed include basic approaches such as burn-in and electrical screening that are used to improve component reliability, synergistic effects between reliability and radiation effects, the impact of microdose damage from heavy ions on reliability of high-density digital circuits, and assessing the overall risk to components in space that are subjected to overstress conditions.
Keywords
digital circuits; integrated circuit reliability; optoelectronic devices; radiation effects; electrical screening; high-density digital circuits; microdose damage; microelectronic devices; optoelectronic devices; reliability; space radiation effects; Microelectronics; optoelectronics; radiation damage; reliability; space radiation;
fLanguage
English
Journal_Title
Device and Materials Reliability, IEEE Transactions on
Publisher
ieee
ISSN
1530-4388
Type
jour
DOI
10.1109/TDMR.2010.2048111
Filename
5703182
Link To Document