Graphene-Side-Gate Engineering

Author

Chen, Ching-Tzu ; Low, Tony ; Chiu, Hsin-Ying ; Zhu, Wenjuan

Author_Institution

IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

33

Issue

3

fYear

2012

fDate

3/1/2012 12:00:00 AM

Firstpage

330

Lastpage

332

Abstract

Various mesoscopic devices exploit electrostatic side gates for their operation. In this letter, we investigate how voltage biasing of graphene side gates modulates the electrical transport characteristics of a graphene channel. We explore myriads of typical side-gated devices such as symmetric dual-side gates and asymmetric single-side gates, in monolayer and bilayer graphene. The side gates modulate the electrostatic doping in the graphene channel whose effect is reflected in transport measurement. This modulation efficiency is systematically characterized for all our devices and agrees well with the modeling presented.

Keywords

electrostatic devices; field effect transistors; graphene; C; asymmetric single-side gates; bilayer graphene; electrical transport characteristics; electrostatic doping; electrostatic side gates; graphene channel; graphene field-effect transistor; graphene-side-gate engineering; mesoscopic devices; modulation efficiency; monolayer graphene; symmetric dual-side gates; transport measurement; Electrical resistance measurement; Electrostatic measurements; Electrostatics; Logic gates; Modulation; Resistance; Transistors; Electrostatics; graphene field-effect transistor (FET); side gate;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2180355

Filename

6144689