Title :
Graphene-Side-Gate Engineering
Author :
Chen, Ching-Tzu ; Low, Tony ; Chiu, Hsin-Ying ; Zhu, Wenjuan
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
3/1/2012 12:00:00 AM
Abstract :
Various mesoscopic devices exploit electrostatic side gates for their operation. In this letter, we investigate how voltage biasing of graphene side gates modulates the electrical transport characteristics of a graphene channel. We explore myriads of typical side-gated devices such as symmetric dual-side gates and asymmetric single-side gates, in monolayer and bilayer graphene. The side gates modulate the electrostatic doping in the graphene channel whose effect is reflected in transport measurement. This modulation efficiency is systematically characterized for all our devices and agrees well with the modeling presented.
Keywords :
electrostatic devices; field effect transistors; graphene; C; asymmetric single-side gates; bilayer graphene; electrical transport characteristics; electrostatic doping; electrostatic side gates; graphene channel; graphene field-effect transistor; graphene-side-gate engineering; mesoscopic devices; modulation efficiency; monolayer graphene; symmetric dual-side gates; transport measurement; Electrical resistance measurement; Electrostatic measurements; Electrostatics; Logic gates; Modulation; Resistance; Transistors; Electrostatics; graphene field-effect transistor (FET); side gate;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2180355
