DocumentCode :
1437493
Title :
Thermoelastic Dissipation in Etch-Hole Filled Lamé Bulk-Mode Silicon Microresonators
Author :
Tu, Cheng ; Lee, Joshua E -Y
Author_Institution :
Dept. of Electron. Eng., City Univ. of Hong Kong, Kowloon, China
Volume :
33
Issue :
3
fYear :
2012
fDate :
3/1/2012 12:00:00 AM
Firstpage :
450
Lastpage :
452
Abstract :
The perforation of a Lamé bulk-mode silicon mechanical resonator via uniformly distributed etch holes has been observed to drastically reduce the quality factor by over 90%. The cause of this sharp drop remains largely unknown. A high is important, while etch holes are commonly used in the fabrication of resonators. This letter traces the cause to thermoelastic dissipation through the use of finite-element analysis based on coupled thermoelastic equations. The results from the analysis are well corroborated by data from measurements of fabricated silicon-on-insulator devices.
Keywords :
Q-factor; bulk acoustic wave devices; elemental semiconductors; etching; finite element analysis; microcavities; micromechanical resonators; silicon; thermoelasticity; Lame bulk-mode silicon mechanical resonator; coupled thermoelastic equation; etch-hole filled Lame bulk-mode silicon microresonator; finite element analysis; quality factor; resonator fabrication; silicon-on-insulator device fabrication; thermoelastic dissipation; uniformly distributed etch hole; Iron; Optical resonators; Q factor; Q measurement; Shape; Silicon; Strain; Bulk acoustic wave devices; etch holes; micromechanical resonator; quality factor;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2179973
Filename :
6144691
Link To Document :
بازگشت