• DocumentCode
    1437509
  • Title

    Suppression of I-V kink in doped channel InAlAs/InGaAs/InP heterojunction field-effect transistor (HFET) using silicon nitride passivation

  • Author

    Wang, H. ; Ng, G.I. ; Gilbert, M. ; O´Sullivan, P.J.

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
  • Volume
    32
  • Issue
    21
  • fYear
    1996
  • fDate
    10/10/1996 12:00:00 AM
  • Firstpage
    2026
  • Lastpage
    2027
  • Abstract
    The impact of silicon nitride (SIN) surface passivation on the kink effect of doped channel InAlAs/InGaAs/InP HFETs has been investigated for the first time. Experiments show that the I-V kinks of these HFETs can be reduced significantly by using SiN surface passivation
  • Keywords
    III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; indium compounds; passivation; surface states; vapour phase epitaxial growth; I-V kink suppression; InAlAs-InGaAs-InP; SiN; SiN surface passivation; doped channel HFET; field-effect transistor; heterojunction FET;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19961333
  • Filename
    542909
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1437509