• DocumentCode
    1437972
  • Title

    Dielectric small-signal response by protons in amorphous insulators

  • Author

    Kliem, H.

  • Author_Institution
    Inst. fuer Werkstoffe der Elektrotech., Aachen Univ. of Technol., West Germany
  • Volume
    24
  • Issue
    2
  • fYear
    1989
  • fDate
    4/1/1989 12:00:00 AM
  • Firstpage
    185
  • Lastpage
    197
  • Abstract
    A model is proposed in which protons fluctuate between neighboring atomic shells either by thermal activation or by a tunneling process. The transition probability of the protons depends on the distance between the adjacent atoms. The characteristic pair distribution function of interatomic distances in the amorphous state is a consequence of locally minimizing the potential energy of the atoms during condensation, as has been shown by F.F. Abraham (1980). This general principle of minimizing the energy leads to similar distribution functions in different materials. Therefore, different types of insulators have a similar relaxational behavior. Experiments carried out with thin films of aluminum oxide and polyimide confirm quantitatively the proposed model
  • Keywords
    alumina; dielectric thin films; electrical conductivity of amorphous semiconductors and insulators; electronic conduction in insulating thin films; organic insulating materials; polymer films; Al2O3 thin films; alumina; amorphous insulators; dielectric small signal response by protons; distribution functions; interatomic distances; model; polyimide; proton fluctuate between atoms; thermal activation; tunneling process; Aluminum oxide; Amorphous materials; Dielectrics and electrical insulation; Distribution functions; Frequency domain analysis; Hydrogen; Polarization; Polyimides; Protons; Silicon;
  • fLanguage
    English
  • Journal_Title
    Electrical Insulation, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9367
  • Type

    jour

  • DOI
    10.1109/14.90270
  • Filename
    90270