Title :
A comparative study of the passivation films on AlGaAs/GaAs heterojunction diodes and bipolar transistors
Author :
Hwang, Hann-Ping ; Cheng, Yung-Shih ; Shieh, Jia-Lin ; Chyi, Jen-Inn
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
fDate :
2/1/2001 12:00:00 AM
Abstract :
A series of Si-based thin films, including amorphous Si, SiC, as well as the conventional SiOx and SiNx, was investigated in terms of the electrical characteristics of GaAs/Al0.3Ga0.7As heterostructure diodes and heterojunction bipolar transistors (HBTs). All the films were found effective in reducing the leakage current and long term degradation. Less size-dependence of the current gain was found for the HBTs passivated by amorphous Si and SiC. In addition, the devices passivated by amorphous Si and SiC films exhibited better performance during high power operation. This is attributed to the high thermal conductivity of these two materials
Keywords :
III-V semiconductors; aluminium compounds; amorphous semiconductors; gallium arsenide; heterojunction bipolar transistors; leakage currents; passivation; power semiconductor devices; semiconductor diodes; silicon; silicon compounds; thermal conductivity; GaAs-Al0.3Ga0.7As; HBT; Si; Si-based thin films; SiC; SiN; SiNx film; SiO; SiOx film; amorphous Si film; amorphous SiC film; current gain; electrical characteristics; heterojunction bipolar transistors; heterojunction diodes; high power operation; leakage current; long term degradation; passivation films; thermal conductivity; Amorphous materials; Diodes; Electric variables; Gallium arsenide; Passivation; Semiconductor thin films; Silicon carbide; Silicon compounds; Thermal conductivity; Thin film transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
