Title :
Interconnect design strategy: structures, repeaters and materials with strategic system performance analysis (S2PAL) model
Author :
Takahashi, Shuji ; Edahiro, Masato ; Hayashi, Yoshihiro
Author_Institution :
Syst. LSI Design Eng. Div., Kanagawa, Japan
fDate :
2/1/2001 12:00:00 AM
Abstract :
In this paper, we propose a novel methodology for scheming an interconnect strategy, such as what interconnect structure should be taken, how repeaters should be inserted, and when new metal or dielectric materials should be adopted. In the methodology, the strategic system performance analysis model is newly developed as a calculation model that predicts LSI operation frequency and chip size with electrical parameters of transistors and interconnects as well as circuit configuration. The analysis with the model indicates that interconnect delay overcomes circuit block cycle time at a specific length; Dc-cross. Here tentatively, interconnects shorter than Dc-cross are called local interconnects, and interconnects longer than that as global ones. The cross-sectional structures for local and global tiers are optimized separately. We also calculate global interconnect pitch and the chip size enlarged by the global interconnect pitch and the inserted repeaters, and then estimate the effectiveness of introducing new materials for interconnects and dielectrics
Keywords :
VLSI; circuit layout CAD; delay estimation; integrated circuit interconnections; integrated circuit layout; integrated circuit modelling; large scale integration; LSI operation frequency; S2PAL model; chip size; circuit block cycle time; cross-sectional structures; electrical parameters; global interconnects; interconnect delay; interconnect design strategy; interconnect materials; interconnect pitch; local interconnects; repeaters; strategic system performance analysis model; Delay; Design automation; Design engineering; Dielectric materials; Integrated circuit interconnections; Large scale integration; Performance analysis; Process design; Repeaters; System performance;
Journal_Title :
Electron Devices, IEEE Transactions on