An accurate Coulomb mobility model for MOS inversion layer and its application to NO-oxynitride devices

Author

Kondo, Masaki ; Tanimoto, Hiroyoshi

Author_Institution

Syst. LSI Div., Toshiba Corp., Yokohama, Japan

Volume

48

Issue

2

fYear

2001

fDate

2/1/2001 12:00:00 AM

Firstpage

265

Lastpage

270

Abstract

In this paper, a new mobility model for device simulation is presented that incorporates Coulomb scattering due to ionized impurities in the MOS inversion layer. It is well known that the Coulomb scattering strongly depends on carrier concentration because of the screening effect. A crucial technique is used in the modeling procedure, with which a local dependency of the mobility on carrier concentration is derived from the experimental data of the effective mobility. Consequently, the present model has the ability to reproduce the experimental effective mobility over a wide range of impurity concentration with a single parameter set. Comparisons of the simulated and measured I_DS-V_GS curves show good agreement for 0.15 μm CMOS devices having pure SiO₂ and NO-based oxynitride gate oxides

Keywords

MOSFET; carrier density; carrier mobility; impurity scattering; inversion layers; semiconductor device models; 0.15 micron; CMOS devices; Coulomb mobility model; Coulomb scattering; I-V characteristics; I_DS-V_GS curves; MOS inversion layer; NO-based oxynitride gate oxides; NO-oxynitride devices; SiNO; SiO₂; SiO₂ gate oxides; carrier concentration; device simulation; effective mobility; ionized impurities; local dependency; modeling procedure; screening effect; Impurities; Large scale integration; MOS devices; Phonons; Predictive models; Rough surfaces; Scattering; Semiconductor device modeling; Semiconductor process modeling; Surface roughness;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.902725

Filename

902725