DocumentCode
1438082
Title
A three-terminal SOI gated varactor for RF applications
Author
Shen, Keqiang ; Hui, Frankie Ping Shing ; Wong, Wallace Ming Yip ; Chen, Zhiheng ; Lau, Jack ; Chan, Philip C.H. ; Ko, Ping K.
Author_Institution
Hong Kong Univ. of Sci. & Technol., Kowloon, Hong Kong
Volume
48
Issue
2
fYear
2001
fDate
2/1/2001 12:00:00 AM
Firstpage
289
Lastpage
293
Abstract
This paper presents a new CMOS compatible SOI gated varactor for use in RF ICs. With its additional third terminal, the device offers an exceptional large tuning range and a good quality factor. The result of the MEDICI simulation of the structure of the varactor has been confirmed with measured data. A VCO circuit that can potentially exploit the three-terminal property is also reported
Keywords
CMOS integrated circuits; Q-factor; UHF diodes; UHF integrated circuits; UHF oscillators; circuit tuning; silicon-on-insulator; varactors; voltage-controlled oscillators; 1 GHz; CMOS compatible varactor; MEDICI simulation; RF ICs; RF applications; Si; VCO circuit; large tuning range; quality factor; three-terminal SOI gated varactor; three-terminal property; CMOS process; Capacitance; Circuit simulation; Diodes; Lifting equipment; Q factor; Radio frequency; Tuning; Varactors; Voltage-controlled oscillators;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.902729
Filename
902729
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