Title :
Optimization of the specific on-resistance of the COOLMOSTM
Author :
Chen, Xing-Bi ; Sin, Johnny K O
Author_Institution :
Dept. of Electron. Eng., Univ. of Electron. Sci. & Technol. of China, Sichuan, China
fDate :
2/1/2001 12:00:00 AM
Abstract :
The optimized values for the physical and geometrical parameters of the p- and n-regions used in the voltage-sustaining layer of the COOLMOSTM are presented. Design of the parameters is aimed to produce the lowest specific on-resistance, Ron for a given breakdown voltage, VB. A new relationship between the Ron and VB for the COOLMOSTM is developed as Ron=C·VB1.32, where the constant C is dependent on the cell dimension and pattern geometry. It is also found that by putting a thin layer of insulator between the p-region and its neighboring n-regions, the value of Ron can be further reduced. The possibility of incorporating the insulating layer may open up opportunities for practical implementation of the COOLMOSTM for volume production
Keywords :
charge compensation; electric resistance; insulating thin films; isolation technology; optimisation; power MOSFET; semiconductor device breakdown; COOLMOS; breakdown voltage; cell dimension; composite buffer structure; geometrical parameters; insulator; n-regions; p-regions; pattern geometry; physical parameters; specific on-resistance optimisation; voltage-sustaining layer; volume production; Geometry; Insulation; Ionization; Lattices; MOSFETs; Power transistors; Production; Shape; Silicon compounds; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
