Static and dynamic characterization of large-area high-current-density SiC Schottky diodes

The static and dynamic characteristics of large-area, high-voltage 4H-SiC Schottky barrier diodes are presented. With a breakdown voltage greater than 1200 V and a forward current in excess of 6 A at 2 V forward bias, these devices enable for the first time the evaluation of SiC Schottky diodes in practical switching circuits. These diodes were inserted into standard test circuits and compared to commercially available silicon devices, the results of which are reported here. Substituting SiC Schottky diodes in place of comparably rated silicon PIN diodes reduced the switching losses by a factor of four, and virtually eliminated the reverse recovery transient. These results are even more dramatic at elevated temperatures. While the switching loss in silicon diodes increases dramatically with temperature, the SiC devices remain essentially unchanged. The data presented here clearly demonstrates the distinct advantages offered by SiC Schottky rectifiers, and their emerging potential to replace silicon PIN diodes in power switching applications