Title :
The effect of polysilicon doping on the reverse short-channel effect in sub-quarter micron NMOS transistors
Author :
Sadovnikov, Alexei ; Kalnitsky, Alexander ; Bergemont, Albert ; Hopper, Peter
Author_Institution :
Nat. Semicond. Corp., Santa Clara, CA, USA
fDate :
2/1/2001 12:00:00 AM
Abstract :
Reverse short-channel effect modulation by poly-Si doping level is explained in terms of the effective oxide thickness change due to poly-Si depletion. This modulation is not accounted for in the conventional theories of RSCE and should be taken into consideration in design of submicron CMOSFETs
Keywords :
MOSFET; doping profiles; semiconductor device models; 0.18 mum; channel doping; effective oxide thickness change; polysilicon depletion; polysilicon doping; reverse short-channel effect; reverse short-channel effect modulation; sub-quarter micron NMOS transistors; submicron CMOSFET design; Bipolar transistors; Charge measurement; Current measurement; Diodes; Doping; Impurities; Knee; MOS devices; MOSFET circuits; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
