• DocumentCode
    1438193
  • Title

    The effect of polysilicon doping on the reverse short-channel effect in sub-quarter micron NMOS transistors

  • Author

    Sadovnikov, Alexei ; Kalnitsky, Alexander ; Bergemont, Albert ; Hopper, Peter

  • Author_Institution
    Nat. Semicond. Corp., Santa Clara, CA, USA
  • Volume
    48
  • Issue
    2
  • fYear
    2001
  • fDate
    2/1/2001 12:00:00 AM
  • Firstpage
    393
  • Lastpage
    395
  • Abstract
    Reverse short-channel effect modulation by poly-Si doping level is explained in terms of the effective oxide thickness change due to poly-Si depletion. This modulation is not accounted for in the conventional theories of RSCE and should be taken into consideration in design of submicron CMOSFETs
  • Keywords
    MOSFET; doping profiles; semiconductor device models; 0.18 mum; channel doping; effective oxide thickness change; polysilicon depletion; polysilicon doping; reverse short-channel effect; reverse short-channel effect modulation; sub-quarter micron NMOS transistors; submicron CMOSFET design; Bipolar transistors; Charge measurement; Current measurement; Diodes; Doping; Impurities; Knee; MOS devices; MOSFET circuits; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.902745
  • Filename
    902745
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1438193