Title :
A new method for extracting carrier mobility from Monte Carlo device simulation
Author :
Gan, Haitao ; Tang, Ting-wei
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., CA, USA
fDate :
2/1/2001 12:00:00 AM
Abstract :
In this brief, a new method for extracting carrier mobility from the Monte Carlo device simulation is presented. Unlike the conventional method which is based on taking the time-average of the rate of change of momentum before and after the scattering, this method utilizes the spherical harmonic expansion of the carrier distribution function and an analytical expression for the relaxation time. The new method produces a much smoother result than the time-average method, particularly in low electric field regions
Keywords :
Boltzmann equation; Legendre polynomials; Monte Carlo methods; carrier mobility; carrier relaxation time; harmonic analysis; semiconductor device models; Boltzmann transport equation; Legendre polynomial expansion; Monte Carlo device simulation; carrier distribution function; carrier mobility extraction; low electric field regions; parameter extraction; relaxation time; semiconductor devices; spherical harmonic expansion; Electrical resistance measurement; Electron mobility; Equations; Gain measurement; Immune system; MOSFETs; Monte Carlo methods; Position measurement; Power measurement; Semiconductor device modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
