A new method for extracting carrier mobility from Monte Carlo device simulation

Author

Gan, Haitao ; Tang, Ting-wei

Author_Institution

Dept. of Electr. Eng., Stanford Univ., CA, USA

Volume

48

Issue

2

fYear

2001

fDate

2/1/2001 12:00:00 AM

Firstpage

399

Lastpage

401

Abstract

In this brief, a new method for extracting carrier mobility from the Monte Carlo device simulation is presented. Unlike the conventional method which is based on taking the time-average of the rate of change of momentum before and after the scattering, this method utilizes the spherical harmonic expansion of the carrier distribution function and an analytical expression for the relaxation time. The new method produces a much smoother result than the time-average method, particularly in low electric field regions

Keywords

Boltzmann equation; Legendre polynomials; Monte Carlo methods; carrier mobility; carrier relaxation time; harmonic analysis; semiconductor device models; Boltzmann transport equation; Legendre polynomial expansion; Monte Carlo device simulation; carrier distribution function; carrier mobility extraction; low electric field regions; parameter extraction; relaxation time; semiconductor devices; spherical harmonic expansion; Electrical resistance measurement; Electron mobility; Equations; Gain measurement; Immune system; MOSFETs; Monte Carlo methods; Position measurement; Power measurement; Semiconductor device modeling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.902748

Filename

902748