Infrared focal plane array incorporating silicon IC process compatible bolometer

Author

Tanaka, Akio ; Matsumoto, Shouhei ; Tsukamoto, Nanao ; Itoh, Shigeyuki ; Chiba, Kazuhiro ; Endoh, Tsutomu ; Nakazato, Akihiro ; Okuyama, Kuniyuki ; Kumazawa, Yuichi ; Hijikawa, Minoru ; Gotoh, Hideki ; Tanaka, Takanori ; Teranishi, Nobukazu

Author_Institution

Microelectron. Res. Labs., NEC Corp., Kanagawa, Japan

Volume

43

Issue

11

fYear

1996

fDate

11/1/1996 12:00:00 AM

Firstpage

1844

Lastpage

1850

Abstract

A 128×128 element bolometer infrared image sensor using thin film titanium is proposed. The device is a monolithically integrated structure with a titanium bolometer detector located over a CMOS circuit that reads out the bolometer´s signals. By employing a metallic material like titanium and refining the CMOS readout circuit, it is possible to minimize 1/f noise. It is demonstrated that the use of low 1/f noise material will help increase bias current and improve the S/N ratio. Since the fabrication process is silicon-process compatible, costs can be kept low

Keywords

1/f noise; CMOS integrated circuits; arrays; bolometers; digital readout; focal planes; infrared imaging; integrated circuit noise; titanium; 1/f noise minimization; CMOS circuit; CMOS readout circuit; S/N ratio; Si; Si IC process compatible bolometer; Ti bolometer detector; Ti-SiO₂-Si; bias current; bolometer infrared image sensor; bolometer signal readout; costs; infrared focal plane array; monolithically integrated structure; thin film Ti; Bolometers; CMOS image sensors; Detectors; Infrared image sensors; Inorganic materials; Refining; Silicon; Thin film circuits; Thin film sensors; Titanium;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.543017

Filename

543017