Lateral carrier domain magnetometer in SOI technology

Author

Lau, Jack ; Nguyen, Cuong T. ; Ko, Ping K. ; Chan, Philip C.H.

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong

Volume

43

Issue

11

fYear

1996

fDate

11/1/1996 12:00:00 AM

Firstpage

1851

Lastpage

1856

Abstract

We report here a lateral magnetometer based on the carrier domain effect. For the ease of integration, silicon-based magnetic sensors are often researched. The Vertical Carrier Domain Magnetometer (VCDM), reported some time ago, achieves a high sensitivity based on carrier domain effects and on internal positive feedback. Unfortunately, the VCDM is not practical. We report here a Lateral Carrier Domain Magnetometer built on SOI that solves the problems faced by the VCDM. MEDICI simulation shows the formation of a carrier domain. We fabricated the device using a 6-mask process on a BESOI wafer. The device is probed on wafer with a specially made magnetic chuck that can generate up to 200 Gauss. The LCDM achieves a relative sensitivity of 12.5%/Tesla

Keywords

bipolar transistors; magnetic sensors; magnetometers; photolithography; silicon-on-insulator; 0 to 200 G; 6-mask process; BESOI wafer; MEDICI simulation; NPN transistors; PNP transistors; SOI technology; Si-based magnetic sensors; carrier domain effect; lateral carrier domain magnetometer; lateral magnetometer; magnetic chuck; on wafer probing; relative sensitivity; Feedback; Hard disks; Lifting equipment; Magnetic field measurement; Magnetic heads; Magnetic materials; Magnetic sensors; Magnetometers; Medical simulation; Region 2;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.543018

Filename

543018