A new simplified charge pumping current model and its model parameter extraction [MOSFET]

Author

Li, Hsin-Hsien ; Chu, Yu-lin ; Wu, Ching-Yuan

Author_Institution

Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

43

Issue

11

fYear

1996

fDate

11/1/1996 12:00:00 AM

Firstpage

1857

Lastpage

1863

Abstract

Using the Shockley-Read-Hall (SRH) theory, a simple analytic charge pumping current model has been developed and its accuracy verified by exact numerical analysis. It is shown that the derived analytic charge pumping current model with constant capture cross sections for electrons and holes does not correctly simulate the rising (falling) edges of the experimental charge pumping current. According to the slopes of the logarithmic charge pumping current, effective capture-cross-section models for elections and holes are proposed and are incorporated into the developed analytic charge pumping current model. It is shown that the experimental charge pumping current can be simulated very well by using the modified analytic model

Keywords

MOSFET; electron traps; electron-hole recombination; hole traps; interface states; semiconductor device models; MOSFET; Shockley-Read-Hall theory; charge pumping current model; constant capture cross sections; electron capture cross section; hole capture cross section; interface trap states; logarithmic charge pumping current; model parameter extraction; numerical analysis; trapping kinetics; Analytical models; Charge carrier processes; Charge pumps; Electron traps; Equations; Kinetic theory; Nominations and elections; Numerical analysis; Parameter extraction; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.543019

Filename

543019