Title :
Random noise generation mechanism for a CCD imager with an incomplete transfer-type storage diode
Author :
Nakamura, Nobuo ; Shioyama, Yoshiyuki ; Ohsawa, Shinji ; Sugiki, Tadashi ; Matsunaga, Yoshiyuki
Author_Institution :
ULSI Res. Center, Toshiba Corp., Kawasaki, Japan
fDate :
11/1/1996 12:00:00 AM
Abstract :
A random noise for a CCD imager with an incomplete transfer-type storage diode is theoretically and experimentally discussed. The theoretical result based on the Fermi-Dirac distribution function is in good agreement with the well known experimental result as a “kTC” noise, which is equal to the square root of kTC/2. It is also shown that the random noise in the storage diode is dependent on the amount of the signal charge, and can be reduced for the small signal charge. Moreover, a small signal reset operation (SSR operation) is newly proposed to suppress the capacitive-image-lag and larger random noise. The reproduced image with the high signal-to-noise (S/N) ratio is obtained for a STACK-CCD imager with the small signal reset operation
Keywords :
CCD image sensors; charge storage diodes; random noise; semiconductor device models; CCD imager; Fermi-Dirac distribution function; capacitive-image-lag; incomplete transfer-type storage diode; kTC noise; random noise generation mechanism; signal charge; signal-to-noise ratio; small signal reset operation; Charge coupled devices; Circuit noise; Diodes; Dynamic range; Electrodes; Image storage; Noise generators; Noise reduction; Signal to noise ratio; Silicon compounds;
Journal_Title :
Electron Devices, IEEE Transactions on
