A hot hole-induced low-level leakage current in thin silicon dioxide films

Author

Matsukawa, Naohiro ; Yamada, Seiji ; Amemiya, Kazumi ; Hazama, Hiroaki

Author_Institution

Semiconductor Quality Assurance Dept., Toshiba Corp., Kawasaki, Japan

Volume

43

Issue

11

fYear

1996

fDate

11/1/1996 12:00:00 AM

Firstpage

1924

Lastpage

1929

Abstract

A new kind of stress-induced low-level leakage current (LLLC) in thin silicon dioxide is reported. It is observed after the stress of hot hole injection at the gate edge. Since voltage dependence of this new kind of LLLC is steeper than that of conventional FN stress-induced LLLC, each conduction mechanism may be different. This LLLC is reduced by both hot electron injection and UV irradiation. These reductions are never observed in FN stress-induced LLLC. The most promising mechanism is sequential tunneling via trapped holes

Keywords

MOS capacitors; MOS integrated circuits; dielectric thin films; hole traps; hot carriers; integrated circuit measurement; large scale integration; leakage currents; silicon compounds; tunnelling; LSI; MOS ICs; MOS capacitors; SiO₂; UV irradiation; conduction mechanism; dielectric thin films; gate edge; hot electron injection; hot hole injection; low-level leakage current; sequential tunneling; trapped holes; voltage dependence; Acceleration; EPROM; Electron traps; Hot carriers; Leakage current; Semiconductor films; Silicon compounds; Thermal stresses; Tunneling; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.543028

Filename

543028