Title :
An 80-Gb/s optoelectronic delayed flip-flop IC using resonant tunneling diodes and uni-traveling-carrier photodiode
Author :
Sano, Kimikazu ; Murata, Koichi ; Otsuji, Taiichi ; Akeyoshi, Tomoyuki ; Shimizu, Naofumi ; Sano, Eiichi
Author_Institution :
NTT Photonics Lab., Kanagawa, Japan
fDate :
2/1/2001 12:00:00 AM
Abstract :
This paper describes an 80-Gb/s optoelectronic delayed flip-flop (D-FF) IC that uses resonant tunneling diodes (RTDs) and a uni-traveling-carrier photodiode (UTC-PD). A circuit design that considers the AC currents passing through RTDs and UTC-PD is key to boosting circuit operation speed. A monolithically fabricated IC operated at 80 Gb/s with a low power dissipation of 7.68 mW. The operation speed of 80 Gb/s is the highest among all reported flip-flops. To clarify the maximum operation speed, we analyze the factors limiting circuit speed. Although the bandwidth of UTC-PD limits the maximum speed of operation to 80 Gb/s at present, the circuit has the potential to offer 100-Gb/s-class operation
Keywords :
flip-flops; high-speed integrated circuits; integrated circuit design; integrated optoelectronics; low-power electronics; optical communication equipment; photodiodes; resonant tunnelling diodes; 7.68 mW; 80 Gbit/s; OEIC; circuit design; low power dissipation; maximum operation speed; monolithically fabricated IC; optoelectronic delayed flip-flop IC; resonant tunneling diodes; uni-traveling-carrier photodiode; Boosting; Circuit synthesis; Delay; Diodes; Flip-flops; Monolithic integrated circuits; Photodiodes; Power dissipation; Resonance; Resonant tunneling devices;
Journal_Title :
Solid-State Circuits, IEEE Journal of
