Title :
On the temperature dependence of hysteresis effect in floating-body partially depleted SOI CMOS circuits
Author :
Puri, Ruchir ; Chuang, C.T. ; Ketchen, Mark B. ; Pelella, Mario M. ; Rosenfield, Michael G.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
2/1/2001 12:00:00 AM
Abstract :
This paper presents a detailed study on the temperature dependence of the hysteresis effect in static CMOS circuits and pass-transistor-based circuits with floating-body partially depleted (PD) silicon-on-insulator (SOI) CMOS devices. Basic physical mechanisms underlying the temperature dependence of hysteretic delay variations are examined. It is shown that, depending on the initial state of the circuit, the initial circuit delays have distinct temperature dependence. For steady-state circuit delays, the temperature dependence is dictated solely by the various charge injection/removing mechanisms into/from the body. The use of the cross-coupled dual-rail configuration in pass-transistor-based circuits is shown to be effective in compensating and reducing the disparity in the temperature dependence of the delays
Keywords :
CMOS digital integrated circuits; compensation; delay estimation; hysteresis; integrated circuit modelling; silicon-on-insulator; Si; charge injection mechanisms; charge removal mechanism; compensation; cross-coupled dual-rail configuration; floating-body SOI CMOS circuits; hysteresis effect; hysteretic delay variations; initial circuit delays; partially depleted SOI CMOS circuits; pass-transistor-based circuits; physical mechanisms; static CMOS circuits; steady-state circuit delays; temperature dependence; CMOS technology; Circuit noise; Delay; Hysteresis; Integrated circuit technology; Partial discharges; Silicon on insulator technology; Steady-state; Temperature dependence; Timing;
Journal_Title :
Solid-State Circuits, IEEE Journal of
