• DocumentCode
    1438418
  • Title

    Improving performance of non-duplexer active transceiver antenna with defected structures

  • Author

    Tirado-Mendez, J.A. ; Jardon-Aguilar, H. ; Flores-Leal, Ruben ; Reyes-Ayala, Mario ; Andrade-Gonzalez, E.

  • Author_Institution
    Center for Res. & Adv. Studies, IPN, Mexico City, Mexico
  • Volume
    4
  • Issue
    3
  • fYear
    2010
  • fDate
    3/1/2010 12:00:00 AM
  • Firstpage
    342
  • Lastpage
    352
  • Abstract
    The implementation of an active transceiver patch antenna without duplexer is reported. The isolation of the transmitting-receiving ports is increased by almost 20-dB by using defected ground structure patterns obtaining more than 50-dB; besides, cross-polarisation levels are also decreased by more than 15-dB. On the other hand, the use of spur lines allows increasing the linearity of the transmitting path, obtaining a low-harmonic distortion class E power amplifier. In the receiving path, a high-linear low noise amplifier (LNA) is employed with a third-order input intercept point close to 20-dBm. Both amplifiers are built with heterounion bipolar transistor (HBT). To prove the idea, as an example, the operation frequencies and channel separation of the GSM1800 were taken into account for a practical design. The complete active antenna is developed with characteristic impedances different from 50-- to obtain optimal performance of the active blocks.
  • Keywords
    heterojunction bipolar transistors; low noise amplifiers; microstrip antennas; power amplifiers; transceivers; GSM1800; channel separation; cross-polarisation levels; heterounion bipolar transistor; high-linear low noise amplifier; low-harmonic distortion class E power amplifier; nonduplexer active transceiver patch antenna; operation frequencies;
  • fLanguage
    English
  • Journal_Title
    Microwaves, Antennas & Propagation, IET
  • Publisher
    iet
  • ISSN
    1751-8725
  • Type

    jour

  • DOI
    10.1049/iet-map.2008.0383
  • Filename
    5430358