Enhanced radiation hardness of quantum dot lasers to high energy proton irradiation

Author

Ribbat, C. ; Sellin, R. ; Grundmann, M. ; Bimberg, D. ; Sobolev, N.A. ; Carmo, M.C.

Author_Institution

Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany

Volume

37

Issue

3

fYear

2001

fDate

2/1/2001 12:00:00 AM

Firstpage

174

Lastpage

175

Abstract

The influence of high energy proton irradiation on the device properties of InGaAs/GaAs quantum dot and quantum well lasers has been investigated. In the regime of spontaneous emission, quantum dot lasers show a much enhanced radiation hardness compared to quantum well lasers, manifested in a smaller increase of threshold current density. However, in the lasing regime the device characteristics are similarly influenced. Internal differential quantum efficiencies are reduced, internal optical losses remain constant

Keywords

III-V semiconductors; current density; gallium arsenide; indium compounds; laser beams; optical losses; proton effects; quantum well lasers; semiconductor quantum dots; spontaneous emission; InGaAs-GaAs; InGaAs/GaAs; InGaAs/GaAs quantum dot lasers; InGaAs/GaAs quantum well lasers; device characteristics; device properties; enhanced radiation hardness; high energy proton irradiation; internal differential quantum efficiencies; internal optical losses; lasing regime; quantum dot lasers; quantum well lasers; radiation hardness; spontaneous emission; threshold current density;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20010118

Filename

902796