DocumentCode
1438683
Title
High breakdown voltage GaN HFET with field plate
Author
Li, J. ; Cai, S.J. ; Pan, G.Z. ; Chen, Y.L. ; Wen, C.P. ; Wang, K.L.
Author_Institution
Device Res. Lab., California Univ., Los Angeles, CA, USA
Volume
37
Issue
3
fYear
2001
fDate
2/1/2001 12:00:00 AM
Firstpage
196
Lastpage
197
Abstract
A novel high breakdown voltage GaN HFET with a field plate (FP GaN HFET) to form a gamma-shape gate is presented. The use of the field plate significantly reduces the field strength under the gate near the drain side. Simulation results show that the peak electric field of the device is reduced from 1.2×106 V/cm to 0.9× 10 6 V/cm for the particular structure used. A high breakdown voltage (over 110 V) is achieved and the average ratio of BVgd over BVgs reaches a value of 2.4, compared to that of only 1.038 for a conventional GaN HFET
Keywords
III-V semiconductors; gallium compounds; microwave field effect transistors; microwave power transistors; power field effect transistors; semiconductor device breakdown; semiconductor device models; wide band gap semiconductors; 110 V; GaN; breakdown voltage; field plate; field strength; gamma-shape gate; high breakdown voltage GaN HFET; high power microwave applications; peak electric field; simulation results;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20010091
Filename
902811
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