Title :
Pnp InGaAsN-based HBT with graded base doping
Author :
Monier, C. ; Baca, A.G. ; Chang, P.C. ; Li, N.Y. ; Hou, H.Q. ; Ren, F. ; Pearton, S.J.
Author_Institution :
Dept. of Mater. Sci. & Eng., Florida Univ., Gainesville, FL, USA
fDate :
2/1/2001 12:00:00 AM
Abstract :
A grading of the base doping concentration is used to establish an electric field in the base of a Pnp AlGaAs/InGaAsN heterojunction bipolar transistor (HBT). An improved peak current gain value (β≃60) is observed over a device with uniform base doping, due to better hole transport in the base. A cut-off frequency of 15 GHz measured from a 3×12 μm2 non-self aligned HBT demonstrates the practical impact the electric field has on the transit time across the base
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device measurement; semiconductor doping; 15 GHz; AlGaAs-InGaAsN; AlGaAs/InGaAsN Pnp HBT; base doping concentration; cut-off frequency; electric field; graded base doping; heterojunction bipolar transistor; hole transport; nonself aligned HBT; peak current gain; transit time;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010136
