Title :
High-Performance Single-Crystal-Like Nanowire Poly-Si TFTs With Spacer Patterning Technique
Author :
Kang, Tsung-Kuei ; Liao, Ta-Chuan ; Lin, Chia-Min ; Liu, Han-Wen ; Cheng, Huang-Chung
Author_Institution :
Dept. of Electron. Eng., Feng-Chia Univ., Taichung, Taiwan
fDate :
3/1/2011 12:00:00 AM
Abstract :
In this letter, high-performance single-crystal-like nanowire poly-Si TFTs with simple spacer patterning technique were demonstrated and characterized. Due to the nanoscale dimension formed by spacer patterning technique, each nanowire is easily transformed within one crystalline grain of the standard sequential-lateral-solidification (SLS) poly-Si film with the regularly arranged grains and thus performed with a single-crystal like device channel. Due to the high-crystallinity channel, together with the tri-gated structure, the fabricated devices revealed good device integrity of high field-effect mobility of 477 cm2/V · s and good ON/OFF current ratio of 1.07 × 108.
Keywords :
elemental semiconductors; nanowires; silicon; thin film transistors; Si; crystalline grain; high-crystallinity channel; single-crystal-like nanowire thin film transistors; spacer patterning technique; standard sequential-lateral-solidification film; trigated structure; Logic gates; Nanoscale devices; Performance evaluation; Silicon; Thin film transistors; Field-effect mobility; nanowire; sequential-lateral-solidification (SLS); single-crystalline-like; spacer patterning; tri-gated structure;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2099198
