Lateral IGBT in thin SOI for high voltage, high speed power IC

Author

Leung, Ying-Keung ; Paul, Amit K. ; Plummer, James D. ; Wong, S. Simon

Author_Institution

Center for Integrated Syst., Stanford Univ., CA, USA

Volume

45

Issue

10

fYear

1998

fDate

10/1/1998 12:00:00 AM

Firstpage

2251

Lastpage

2254

Abstract

A high voltage LIGBT built in ultra-thin silicon-on-insulator (SOI) with a linearly graded doping profile is reported. The highest breakdown voltage of 720 V was measured for an LIGBT built in 0.5 μm SOI with a 4 μm buried oxide. A forward voltage drop of 6 V at 100 Acm^-2 and a turn-off time of 140 ns have been achieved in the same device. Device forward voltage drop is very sensitive to the SOI thickness due to the recombination of carriers at the two silicon-silicon dioxide interfaces. An SOI thickness of 0.5 μm and an n-buffer doped to 10¹⁸ cm^-3 have been found to be a reasonable trade-off between the breakdown voltage and the forward voltage drop

Keywords

buried layers; doping profiles; electric breakdown; insulated gate bipolar transistors; monolithic integrated circuits; power integrated circuits; power transistors; silicon-on-insulator; 0.5 micron; 140 ns; 6 V; 720 V; HV high speed power IC; SOI thickness; Si-SiO₂; breakdown voltage; buried oxide; forward voltage drop; high voltage LIGBT; high voltage power IC; lateral IGBT; linearly graded doping profile; n-doped buffer; thin SOI; Breakdown voltage; Conductivity; Dielectric substrates; Doping profiles; Forward contracts; Insulated gate bipolar transistors; Logic devices; Power integrated circuits; Radiative recombination; Silicon on insulator technology;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.725263

Filename

725263