Empirical modeling of LF gate noise in GaAs DCFET in impact ionization regime

Author

Lambert, Benoît ; Malbert, Nathalie ; Labat, Nathalie ; Verdier, Frédéric ; Touboul, André

Author_Institution

IXL Lab., Bordeaux Univ., Talence, France

Volume

22

Issue

2

fYear

2001

Firstpage

50

Lastpage

52

Abstract

The evolution of the 1/f gate noise in GaAs DCFET has been analyzed in the impact ionization regime. As the drain bias Vd is raised, a steep increase of the 1/f gate current noise is observed in correlation with the triggering of the impact ionization mechanism. A novel and empirical model of the 1/f low frequency gate current noise S/sub ig/ measured in the impact ionization regime is proposed. The following relation fits it with an exponential law: S/sub ig/=E exp (-F/Vd) (1/f), which is similar to the well-known dependence of the impact ionization rate /spl alpha/ on the drain bias.

Keywords

1/f noise; III-V semiconductors; gallium arsenide; impact ionisation; microwave field effect transistors; semiconductor device models; semiconductor device noise; 1/f gate noise; DCFET; GaAs; LF gate noise; drain bias; impact ionization regime; microwave FETs; Degradation; Frequency; Gallium arsenide; Hot carriers; Impact ionization; Low-frequency noise; MESFETs; Noise measurement; Testing; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.902828

Filename

902828