Title :
Large periphery high-power AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC with oxide-bridging
Author :
Simin, G. ; Hu, X. ; Ilinskaya, N. ; Zhang, J. ; Tarakji, A. ; Kumar, Ajit ; Yang, J. ; Asif Khan, M. ; Gaska, R. ; Shur, M.S.
Author_Institution :
Dept. of Electr. & Comput. Eng., South Carolina Univ., Columbia, SC, USA
Abstract :
We report on AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor (HFET) over SiC substrates with peripheries from 0.15 to 6 mm. These multigate devices with source interconnections were fabricated using a novel oxide-bridging approach. The saturation current was as high as 5.1 A for a 6 mm wide device with a gate leakage of 1 μA/cm2 for 1.5 μm gate length in a 5 μm source-drain opening. The cutoff frequency of around 8 GHz was practically independent of the device periphery. Large-signal output rf-power as high as 2.88 W/mm was measured at 2 GHz. Both the saturation current and the rf-power scaled nearly linearly with the gate width.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; leakage currents; microwave field effect transistors; power MOSFET; 0.15 to 6 mm; 1.5 micron; 2 GHz; 5 micron; 5.1 A; 8 GHz; AlGaN-GaN; SiC; cutoff frequency; gate leakage; gate width; large-signal output rf-power; metal-oxide-semiconductor heterostructure field effect transistors; multigate devices; oxide-bridging; saturation current; source interconnections; source-drain opening; Aluminum gallium nitride; Cutoff frequency; Gallium nitride; HEMTs; Leakage current; MODFETs; MOSHFETs; Microwave devices; Silicon carbide; Substrates;
Journal_Title :
Electron Device Letters, IEEE
