DocumentCode
1438822
Title
Influence of the doping profile on electron mobility in a MOSFET
Author
Gámiz, F. ; López-Villanueva, J.A. ; Roldán, J.B. ; Carceller, J.E.
Author_Institution
Dept. de Electron. y Tecnologia de Computadores, Granada Univ., Spain
Volume
43
Issue
11
fYear
1996
fDate
11/1/1996 12:00:00 AM
Firstpage
2023
Lastpage
2025
Abstract
In this work, the actual effect of the doping profile on electron mobility in MOSFET channels has been studied. For this purpose, a one-electron Monte Carlo simulation has been used to calculate the electron mobility. The influence on the mobility of several ion-implanted profiles typical of present technology and of diffused profiles have been compared
Keywords
MOSFET; Monte Carlo methods; doping profiles; electron mobility; semiconductor device models; semiconductor doping; MOSFET; diffused profiles; doping profile; electron mobility; ion-implanted profiles; one-electron Monte Carlo simulation; Doping profiles; Electron mobility; Ion implantation; MOS devices; MOSFET circuits; Monte Carlo methods; Semiconductor device doping; Semiconductor impurities; Semiconductor process modeling; Substrates;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.543043
Filename
543043
Link To Document