A model for mobility degradation in highly doped arsenic layers

Author

Rousseau, P.M. ; Griffin, P.B. ; Luning, S. ; Plummer, J.D.

Author_Institution

Center for Integrated Syst., Stanford Univ., CA, USA

Volume

43

Issue

11

fYear

1996

fDate

11/1/1996 12:00:00 AM

Firstpage

2025

Lastpage

2027

Abstract

As arsenic doping concentration increases past the electrical solubility limit, a significant fraction of the arsenic becoming electrically inactive. This inactive arsenic results in an electron mobility degradation. Using laser melt annealing and subsequent deactivation anneals, mobility was studied as a function of active and inactive dose. A model is presented for this effect based on the theory of scattering by neutral defects. Using the model, it is possible to extract active concentration profiles from resistive measurements

Keywords

Hall mobility; arsenic; doping profiles; electron mobility; elemental semiconductors; heavily doped semiconductors; ion implantation; laser beam annealing; semiconductor device models; silicon; Si:As; active dose; deactivation anneals; doping concentration; electrical solubility limit; electron mobility degradation; inactive dose; laser melt annealing; neutral defect scattering; resistive measurements; Chemical lasers; Degradation; Doping; Electron mobility; Implants; Laser modes; Rapid thermal annealing; Scattering; Semiconductor process modeling; Silicon;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.543044

Filename

543044