Title :
Highly strained InGaP/InGaAs p-HEMT using reduced area growth
Author :
Kim, Sang-Soon ; Song, Jong-In
Author_Institution :
Dept. of Inf. & Commun., K-JIST, Kwangju, South Korea
Abstract :
Highly strained InGaP/In/sub 0.33/Ga/sub 0.67/As pseudomorphic high electron mobility transistor (p-HEMT) structures were grown on patterned GaAs substrates. Performance of the highly strained p-HEMTs grown on patterned substrates was compared with that of highly strained p-HEMTs and conventional InGaP/In/sub 0.22/Ga/sub 0.78/As p-HEMTs grown on nonpatterned substrates. The highly strained p-HEMTs grown on patterned substrates showed substantial improvements in dc (transconductance and drain saturation current) and rf (cutoff frequency: f/sub T/ and maximum oscillation frequency: f/sub max/) performances as compared with those of the p-HEMTs grown on nonpatterned substrates. The results indicate the potential of highly strained p-HEMTs using reduced area growth for high-speed device applications.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; III-V semiconductors; InGaP-InGaAs; cutoff frequency; drain saturation current; high-speed device applications; highly strained structures; maximum oscillation frequency; nonpatterned substrates; p-HEMT; patterned substrates; reduced area growth; transconductance; Electron mobility; Etching; Fabrication; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFETs; PHEMTs; Substrates; Surface morphology;
Journal_Title :
Electron Device Letters, IEEE
