High quality interpoly-oxynitride grown by NH/sub 3/ nitridation and N/sub 2/O RTA treatment

Author

Pan, Tung Ming ; Lei, Tan Fu ; Yang, Wen Luh ; Cheng, Chun Ming ; Chao, Tien Sheng

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

22

Issue

2

fYear

2001

Firstpage

68

Lastpage

70

Abstract

In this letter, a method to grow high quality interpolysilicon-oxynitride (interpoly-oxynitride) film is proposed. Samples, nitridized by NH/sub 3/ with additional N/sub 2/O annealing and CVD TEOS deposited on poly-oxynitride (poly-I) with RTA N/sub 2/O oxidation, show excellent electrical properties in terms of very high electric breakdown field, low leakage current, high charge to breakdown, and low electron trapping rate. This novel film is a good candidate for an interpoly dielectric of future high density EEPROM and flash memory devices.

Keywords

EPROM; dielectric thin films; electron traps; flash memories; leakage currents; nitridation; rapid thermal annealing; semiconductor device breakdown; CVD; N/sub 2/O; NH/sub 3/; RTA treatment; charge to breakdown; electric breakdown field; electrical properties; electron trapping rate; flash memory devices; high density EEPROM; interpoly dielectric; interpoly-oxynitride growth; leakage current; nitridation; Chaos; EPROM; Electric breakdown; Electron traps; Flash memory; Leakage current; Nitrogen; Oxidation; Rapid thermal annealing; Rough surfaces;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.902834

Filename

902834