• DocumentCode
    1438876
  • Title

    Forward transit time measurement for heterojunction bipolar transistors using simple Z parameter equation

  • Author

    Lee, Seonghearn

  • Author_Institution
    Electron. & Telecommun. Res. Inst., Daejeon, South Korea
  • Volume
    43
  • Issue
    11
  • fYear
    1996
  • fDate
    11/1/1996 12:00:00 AM
  • Firstpage
    2027
  • Lastpage
    2029
  • Abstract
    A novel extraction technique that is performed without fT measurement is developed for determining the forward transit time of heterojunction bipolar transistors (HBT´s), based on a simple equation with Z parameters in the low-frequency range. This technique is simpler and more accurate than conventional fT method, because only collector resistance is needed to be determined
  • Keywords
    equivalent circuits; heterojunction bipolar transistors; time measurement; HBT; Z parameter equation; collector resistance; extraction technique; forward transit time measurement; heterojunction bipolar transistors; Annealing; Data mining; Electrical resistance measurement; Electron devices; Equations; Equivalent circuits; Frequency measurement; Heterojunction bipolar transistors; Surface contamination; Time measurement;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.543045
  • Filename
    543045
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1438876