Title :
Forward transit time measurement for heterojunction bipolar transistors using simple Z parameter equation
Author_Institution :
Electron. & Telecommun. Res. Inst., Daejeon, South Korea
fDate :
11/1/1996 12:00:00 AM
Abstract :
A novel extraction technique that is performed without fT measurement is developed for determining the forward transit time of heterojunction bipolar transistors (HBT´s), based on a simple equation with Z parameters in the low-frequency range. This technique is simpler and more accurate than conventional fT method, because only collector resistance is needed to be determined
Keywords :
equivalent circuits; heterojunction bipolar transistors; time measurement; HBT; Z parameter equation; collector resistance; extraction technique; forward transit time measurement; heterojunction bipolar transistors; Annealing; Data mining; Electrical resistance measurement; Electron devices; Equations; Equivalent circuits; Frequency measurement; Heterojunction bipolar transistors; Surface contamination; Time measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
