DocumentCode
1438918
Title
Comment on “Channel Length and Threshold Voltage Dependence of a Transistor Mismatch in a 32-nm HKMG Technology”
Author
Hook, T.B. ; Johnson, J.B. ; Cathignol, A. ; Cros, A. ; Ghibaudo, Gerard
Author_Institution
IBM Microelectron., Essex Junction, VT, USA
Volume
58
Issue
4
fYear
2011
fDate
4/1/2011 12:00:00 AM
Firstpage
1255
Lastpage
1256
Abstract
This correspondence briefly describes and reconciles two separate streams of work, which extend the Pelgrom model for a transistor mismatch. While independently conceived and pursued, similar and complementary conclusions have been reported by these groups, refining the understanding of a transistor mismatch to encompass halo-dominated transistor designs.
Keywords
MOSFET; analogue integrated circuits; HKMG technology; MOSFET; Pelgrom model; analog integrated circuits; channel length; halo-dominated transistor designs; size 32 mm; threshold voltage dependence; transistor mismatch; Doping; Implants; Integrated circuit modeling; MOSFETs; Semiconductor process modeling; Threshold voltage; Analog integrated circuits; MOSFETs;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2011.2104962
Filename
5704571
Link To Document