Title :
Accurate RF large-signal model of LDMOSFETs including self-heating effect
Author :
Yang, Youngoo ; Yi, Jaehyok ; Kim, Bumman
Author_Institution :
Dept. of Electron. & Electr. Eng., Pohang Inst. of Sci. & Technol., South Korea
fDate :
2/1/2001 12:00:00 AM
Abstract :
In this paper, we present a new silicon RF LDMOSFET large-signal model including a self-heating effect. A new empirical channel current model suited for accurately predicting intermodulation distortion is employed. The proposed channel current model can represent transconductance (gm) saturation and rolloff in the continuous manner. It has continuous higher order derivatives for accurate prediction of nonlinear microwave circuit behavior, such as power amplifiers, microwave mixers, oscillators, etc. Using the complete large-signal model, we have designed and implemented a 1.2 GHz power amplifier. The measured and simulated amplifier characteristics, especially the intermodulation and harmonic behaviors, are in good agreement
Keywords :
UHF field effect transistors; elemental semiconductors; equivalent circuits; intermodulation distortion; power MOSFET; semiconductor device models; silicon; 1.2 GHz; IMD prediction; LDMOSFETs; RF large-signal model; Si; amplifier characteristics; continuous higher order derivatives; empirical channel current model; intermodulation distortion; nonlinear microwave circuit behavior prediction; rolloff; self-heating effect; transconductance saturation; High power amplifiers; Intermodulation distortion; Microwave amplifiers; Microwave circuits; Microwave oscillators; Power amplifiers; Predictive models; Radio frequency; Silicon; Transconductance;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
