A novel interpretation of transistor S-parameters by poles and zeros for RF IC circuit design

Author

Lu, Shey-Shi ; Chen, Tsu-Wei ; Chen, To-Wei ; Meng, Chin-Chun

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

49

Issue

2

fYear

2001

fDate

2/1/2001 12:00:00 AM

Firstpage

406

Lastpage

409

Abstract

In this paper, we have developed an interpretation of transistor S-parameters by poles and zeros. The results from our proposed method agreed well with experimental data from GaAs FETs and Si MOSFETs. The concept of source-series feedback was employed to analyze a transistor circuit set up for the measurement of the S-parameters. Our method can describe the frequency responses of all transistor S-parameters very easily and the calculated S-parameters are scalable with device sizes. It was also found that the long-puzzled kink phenomenon of S₂₂ observed in a Smith chart can be explained by the poles and zeros of S₂₂

Keywords

MMIC; S-parameters; UHF integrated circuits; UHF transistors; equivalent circuits; feedback; frequency response; integrated circuit design; microwave transistors; poles and zeros; semiconductor device models; 0.5 to 20 GHz; GaAs; GaAs FETs; RFIC design; S₂₂; Si; Si MOSFET; Smith chart; frequency responses; kink phenomenon; poles and zeros; source-series feedback; transistor S-parameters; Circuit analysis; Circuit synthesis; FETs; Feedback circuits; Gallium arsenide; MOSFETs; Microwave circuits; Poles and zeros; Radio frequency; Radiofrequency integrated circuits;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.903109

Filename

903109