Title :
p-channel quantum-well heterostructure MI/sup 3/SFET
Author :
Kiehl, Richard A. ; Tiwari, Sandip ; Wright, Steven L. ; Olson, M.A.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
6/1/1988 12:00:00 AM
Abstract :
A p-channel heterostructure MISFET-like device based on a quantum well with an underlying impurity layer is discussed. The device is based on an AlGaAs/GaAs heterostructure with a recessed-gate geometry and uses Zn-diffused refractory-metal contacts. The 4100 cm/sup 2//V-s hole mobility obtained in this inverted-interface structure at 77 K is comparable to that achieved in normal-interface AlGaAs/GaAs heterostructures. Transconductance and K-factor values as high as 52 mS/mm and 140 mS/V-mm, respectively, are obtained at 77 K in p-channel FETs with 2.0- mu m gate lengths and 6.0- mu m source-drain spacings, representing state-of-the-art values for p-HFETs at similar dimensions.<>
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; semiconductor technology; 2 micron; 6 micron; 77 K; AlGaAs-GaAs heterostructures; AlGaAs/GaAs heterostructures; K-factor values; MISFET-like device; Zn-diffused refractory-metal contacts; gate lengths; inverted-interface structure; metal insulator inverted interface semiconductor FET; p-HFETs; p-channel quantum-well heterostructure MI/sup 3/SFET; recessed-gate geometry; semiconductors; source-drain spacings; underlying impurity layer; Degradation; FETs; Fabrication; Gallium arsenide; HEMTs; MODFET integrated circuits; Ohmic contacts; Quantum wells; Temperature; Zinc;
Journal_Title :
Electron Device Letters, IEEE
