• DocumentCode
    1439638
  • Title

    An Improved Broadband High Linearity SiGe HBT Differential Amplifier

  • Author

    Pan, Hsuan-Yu Marcus ; Larson, Lawrence E.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of California, San Diego, La Jolla, CA, USA
  • Volume
    58
  • Issue
    8
  • fYear
    2011
  • Firstpage
    1685
  • Lastpage
    1694
  • Abstract
    An improved all-npn broadband highly linear SiGe amplifier is presented. The operation of the proposed amplifier relies on two dependent translinear loops. The frequency response, linearity, input voltage swing range, and noise performance are analyzed. A broadband linear amplifier with 46 dBm OIP3 at 20 MHz, 34 dBm OIP3 at 1 GHz, 6 dB noise figure, and 10.3 dBm output P1 dB is demonstrated.
  • Keywords
    Ge-Si alloys; differential amplifiers; heterojunction bipolar transistors; wideband amplifiers; HBT differential amplifier; broadband linear amplifier; frequency 1 GHz; frequency 20 MHz; frequency response; noise figure 6 dB; Broadband amplifiers; Impedance; Junctions; Linearity; Noise; Silicon germanium; BJT; Caprio´s Quad; SiGe; broadband; linear amplifier;
  • fLanguage
    English
  • Journal_Title
    Circuits and Systems I: Regular Papers, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1549-8328
  • Type

    jour

  • DOI
    10.1109/TCSI.2010.2103191
  • Filename
    5705524
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1439638