DocumentCode :
1439638
Title :
An Improved Broadband High Linearity SiGe HBT Differential Amplifier
Author :
Pan, Hsuan-Yu Marcus ; Larson, Lawrence E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, San Diego, La Jolla, CA, USA
Volume :
58
Issue :
8
fYear :
2011
Firstpage :
1685
Lastpage :
1694
Abstract :
An improved all-npn broadband highly linear SiGe amplifier is presented. The operation of the proposed amplifier relies on two dependent translinear loops. The frequency response, linearity, input voltage swing range, and noise performance are analyzed. A broadband linear amplifier with 46 dBm OIP3 at 20 MHz, 34 dBm OIP3 at 1 GHz, 6 dB noise figure, and 10.3 dBm output P1 dB is demonstrated.
Keywords :
Ge-Si alloys; differential amplifiers; heterojunction bipolar transistors; wideband amplifiers; HBT differential amplifier; broadband linear amplifier; frequency 1 GHz; frequency 20 MHz; frequency response; noise figure 6 dB; Broadband amplifiers; Impedance; Junctions; Linearity; Noise; Silicon germanium; BJT; Caprio´s Quad; SiGe; broadband; linear amplifier;
fLanguage :
English
Journal_Title :
Circuits and Systems I: Regular Papers, IEEE Transactions on
Publisher :
ieee
ISSN :
1549-8328
Type :
jour
DOI :
10.1109/TCSI.2010.2103191
Filename :
5705524
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1439638
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