Title :
Phase-Change Technology and the Future of Main Memory
Author :
Lee, Benjamin C. ; Zhou, Ping ; Yang, Jun ; Zhang, Youtao ; Zhao, Bo ; Ipek, Engin ; Mutlu, Onur ; Burger, Doug
Author_Institution :
Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
Phase-change may enable continued scaling of main memories, but PCM has higher access latencies, incurs higher power costs, and wears out more quickly than DRAM. This article discusses how to mitigate these limitations through buffer sizing, row caching, write reduction, and wear leveling, to make PCM a viable dream alternative for scalable main memories.
Keywords :
DRAM chips; cache storage; phase change memories; DRAM; PCM; buffer sizing; main memory; phase change technology; power cost; row caching; wear leveling; write reduction; Costs; Delay; Flash memory; Material storage; Nonvolatile memory; Phase change materials; Phase change memory; Prototypes; Random access memory; Space technology; DRAM; PCM; energy efficiency; memory architecture; phase-change memory; technology scaling;
Journal_Title :
Micro, IEEE
