DocumentCode :
1439871
Title :
Highly Uniform, Self-Compliance, and Forming-Free ALD 
-Based RRAM With Ge Doping
Author :
Wang, Zhongrui ; Zhu, W.G. ; Du, A.Y. ; Wu, L. ; Fang, Z. ; Tran, X.A. ; Liu, W.J. ; Zhang, K.L. ; Yu, H.-Y.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Volume :
59
Issue :
4
fYear :
2012
fDate :
4/1/2012 12:00:00 AM
Firstpage :
1203
Lastpage :
1208
Abstract :
Atomic layer deposited (ALD) HfO2 resistive-switching random access memory devices with high uniformity, self-compliance, and forming-free behavior are demonstrated. Through comparative experiments, we find that appropriate deposition techniques and annealing conditions lead to self-compliance. The forming-free behavior originates from the oxygen deficiency due to the metal doping layer. High uniformity, by first-principle calculation, is caused by Ge doping in the HfO2, which lowers the oxygen-vacancy formation energy.
Keywords :
ab initio calculations; annealing; atomic layer deposition; doping; elemental semiconductors; germanium; hafnium compounds; random-access storage; Ge Doping; HfO2:Ge; annealing condition; atomic layer deposition; deposition technique; first-principle calculation; forming-free ALD RRAM; metal doping layer; oxygen deficiency; oxygen-vacancy formation energy; resistive-switching random access memory device; self-compliance ALD RRAM; Annealing; Doping; Hafnium compounds; Resistance; Switches; Tin; $ hbox{HfO}_{2}$
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2012.2182770
Filename :
6145640
Link To Document :
