Title :
Neutron-Induced Failure in Silicon IGBTs, Silicon Super-Junction and SiC MOSFETs
Author :
Griffoni, Alessio ; Van Duivenbode, Jeroen ; Linten, Dimitri ; Simoen, Eddy ; Rech, Paolo ; Dilillo, Luigi ; Wrobel, Frédéric ; Verbist, Patrick ; Groeseneken, Guido
Author_Institution :
OSRAM, Treviso, Italy
Abstract :
50 MeV and 80 MeV neutron-induced failure is investigated for several types of power devices (super-junction, IGBT and SiC) from different vendors. A strong dependence on the device type and orientation is observed.
Keywords :
Insulated gate bipolar transistors; Ions; Logic gates; MOSFETs; Neutrons; Silicon; Silicon carbide; Insulated gate bipolar transistor (IGBT); neutrons; power MOSFET; silicon carbide (SiC); single event burnout (SEB); single event gate rupture (SEGR); super-junction;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2011.2180924
