Crystal Defects in CdZnTe Crystals Grown by the Modified Low-Pressure Bridgman Method

Author

Marchini, L. ; Zappettini, A. ; Zha, M. ; Zambelli, N. ; Bolotnikov, A.E. ; Camarda, G.S. ; James, R.B.

Author_Institution

IMEM-CNR, Parma, Italy

Volume

59

Issue

2

fYear

2012

fDate

4/1/2012 12:00:00 AM

Firstpage

264

Lastpage

267

Abstract

Cadmium Zinc Telluride (CZT) is among the most promising materials for room-temperature X- and gamma-ray detectors. However, crystal defects such as Te inclusions and subgrain boundaries significantly hamper their performances. In this work, we evaluated CZT crystals grown by the modified low-pressure Bridgman technique at the IMEM Institute, Parma. We characterized the crystals by IR microscopy to identify the sizes and concentrations of the Te inclusions, along with high spatial resolution X-ray response mapping to measure the uniformity of their charge-transport properties. In addition, we employed white X-ray beam diffraction topography to analyze their crystalline structure.

Keywords

II-VI semiconductors; X-ray detection; X-ray diffraction; cadmium compounds; crystal growth from melt; crystal structure; gamma-ray detection; grain boundaries; inclusions; infrared spectra; semiconductor counters; zinc compounds; CdZnTe; CdZnTe crystals; IMEM Institute; IR microscopy; Parma; Te inclusion concentrations; Te inclusion size; X-ray beam diffraction topography; cadmium zinc telluride; charge-transport properties; crystal defects; crystalline structure; high spatial resolution X-ray response mapping; modified low-pressure bridgman method; room-temperature X-ray detector; room-temperature gamma-ray detector; subgrain boundaries; Correlation; Crystals; Detectors; Surfaces; X-ray diffraction; X-ray imaging; CdZnTe; crystal defects;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2011.2181414

Filename

6145668