DocumentCode :
1440094
Title :
Capacitance Measurements of Two-Dimensional and Three-Dimensional IC Interconnect Structures by Quasi-Static 
–  measurement technique is applied to measure capacitance of 2-D (planar) and 3-D IC interconnect test structures. The advantages of the quasi-static approach such as the immunity from frequency dependence effects and the capability of measuring small capacitance values in the 100-fF range are particularly attractive for the characterization of the interconnect capacitance in planar and vertical architectures with small dimensions. Issues related to the QSCV measurements of leaky capacitors are analyzed and quantified. The capacitance of different 2-D and 3-D interconnect structures is measured, and the QSCV results are compared with capacitance values extracted from impedance measurements of the same structures in the frequency domain.</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>capacitance measurement; capacitors; frequency-domain analysis; integrated circuit interconnections; integrated circuit testing; 2D IC interconnect test structure; 3D IC interconnect test structure; QSCV measurement technique; capacitance measurement; capacitance value; frequency dependence effect; frequency domain; impedance measurement; interconnect capacitance; leaky capacitor; planar architecture; quasistatic C-V measurement technique; vertical architecture; Capacitance; Capacitance measurement; Capacitors; Current measurement; Frequency measurement; Impedance measurement; Voltage measurement; 2-D and 3-D IC interconnects; Capacitance measurements; impedance measurements; metal–insulator–semiconductor (MIS) capacitor; quasi-static <formula formulatype=)
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fLanguage :
English
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9456
Type :
jour
DOI :
10.1109/TIM.2011.2179829
Filename :
6145676
Link To Document :
