Title :
An 8-bit-resolution, 360-μs write time nonvolatile analog memory based on differentially balanced constant-tunneling-current scheme (DBCS)
Author :
Kim, Kyu-hyoun ; Lee, Kwyro ; Jung, Tae-Sung ; Suh, Kang-Deog
Author_Institution :
Samsung Electron. Co., Kyungki, South Korea
fDate :
11/1/1998 12:00:00 AM
Abstract :
This paper describes a fast and accurate nonvolatile analog memory (NVAM) and its programming scheme. Both constant programming rate and single-pulse programmability have been achieved, which drastically enhance programming speed and accuracy. A prototype chip containing 8×128 NVAM cells (cell size of 9×13.6 μm2) has been fabricated using 0.8-μm CMOS. Each cell is measured to store more than eight bit levels within 360 μs
Keywords :
CMOS analogue integrated circuits; VLSI; analogue storage; cellular arrays; 0.8 micron; 360 mus; 8 bit; CMOS; NVAM; accuracy; bit levels; cell size; constant programming rate; differentially balanced constant-tunneling-current scheme; nonvolatile analog memory; programming scheme; programming speed; single-pulse programmability; Analog memory; Coupling circuits; Neural networks; Nonvolatile memory; Prototypes; Semiconductor device measurement; Tunneling; Very large scale integration; Voltage; Writing;
Journal_Title :
Solid-State Circuits, IEEE Journal of
