An 8-bit-resolution, 360-μs write time nonvolatile analog memory based on differentially balanced constant-tunneling-current scheme (DBCS)

Author

Kim, Kyu-hyoun ; Lee, Kwyro ; Jung, Tae-Sung ; Suh, Kang-Deog

Author_Institution

Samsung Electron. Co., Kyungki, South Korea

Volume

33

Issue

11

fYear

1998

fDate

11/1/1998 12:00:00 AM

Firstpage

1758

Lastpage

1762

Abstract

This paper describes a fast and accurate nonvolatile analog memory (NVAM) and its programming scheme. Both constant programming rate and single-pulse programmability have been achieved, which drastically enhance programming speed and accuracy. A prototype chip containing 8×128 NVAM cells (cell size of 9×13.6 μm²) has been fabricated using 0.8-μm CMOS. Each cell is measured to store more than eight bit levels within 360 μs

Keywords

CMOS analogue integrated circuits; VLSI; analogue storage; cellular arrays; 0.8 micron; 360 mus; 8 bit; CMOS; NVAM; accuracy; bit levels; cell size; constant programming rate; differentially balanced constant-tunneling-current scheme; nonvolatile analog memory; programming scheme; programming speed; single-pulse programmability; Analog memory; Coupling circuits; Neural networks; Nonvolatile memory; Prototypes; Semiconductor device measurement; Tunneling; Very large scale integration; Voltage; Writing;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.726571

Filename

726571