Title :
Tensile-strained GaAsP-AlGaAs laser diodes for reliable 1.2-W continuous-wave operation at 735 nm
Author :
Sumpf, B. ; Beister, G. ; Erbert, G. ; Fricke, J. ; Knauer, A. ; Pittroff, W. ; Ressel, P. ; Sebastian, J. ; Wenzel, H. ; Trankle, G.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin, Germany
Abstract :
Tensile-strained GaAsP quantum wells embedded in AlGaAs large optical cavity structure were investigated at an emission wavelength of 735 nm. 1.2-W continuous-wave operation for 100-μm stripe width diode lasers over 1000 h is reported. Experiments with different stripe widths showed a high stability at an output power of 12-mW/μm stripe widths with degradation rates below 5/spl middot/10/sup -5/ h/sup -1/, i.e., lifetimes larger than 5000 h could be expected.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; gallium compounds; laser beams; laser cavity resonators; laser reliability; laser stability; optical testing; quantum well lasers; semiconductor device reliability; vapour phase epitaxial growth; 1.2 W; 100 mum; 1000 h; 735 nm; AlGaAs; AlGaAs large optical cavity structure; GaAsP; GaAsP-AlGaAs; continuous-wave operation; degradation rates; emission wavelength; lifetimes; output power; reliable continuous-wave operation; stability; stripe width diode lasers; stripe widths; tensile-strained GaAsP quantum wells; tensile-strained laser diodes; Degradation; Diode lasers; Lab-on-a-chip; Power generation; Power lasers; Quantum well lasers; Temperature; Testing; Threshold current; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
