DocumentCode
1440195
Title
Single Mesowire Transistor From Perylene Tetracarboxylic Diimide
Author
Koorie, Mark A. ; Khopkar, Yashdeep ; Ji, Hai-Feng ; Zivanovic, Sandra R.
Author_Institution
Electr. Eng. Program, Louisiana Tech Univ., Ruston, LA, USA
Volume
11
Issue
3
fYear
2012
fDate
5/1/2012 12:00:00 AM
Firstpage
448
Lastpage
450
Abstract
We have recently fabricated new nano/mesowires of perylene tetracarboxylic diimide (PTCDI) without side chains by self-assembling them from a gas phase. In this letter, we discuss a single PTCDI mesowire transistor that was successfully fabricated, characterized, and modeled. This organic n-channel field effect transistor shows good output and transfer characteristics. Our transistor model includes the Poole-Frenkel electric field dependence of charge carrier mobility in organic materials and fits all experimental output characteristics of the transistor. The zero-field charge carrier mobility of the PTCDI mesowire is found to be 0.72 cm2/(V·s). The experimental results are promising for the further development of single nanowire transistors and advancement of organic nanoelectronics.
Keywords
Poole-Frenkel effect; carrier mobility; nanoelectronics; nanofabrication; nanowires; organic field effect transistors; organic semiconductors; self-assembly; Poole-Frenkel electric field dependence; gas phase; nanomesowires; organic materials; organic n-channel field effect transistor; organic nanoelectronics; perylene tetracarboxylic diimide; self-assembly; side chains; single PTCDI mesowire transistor; single nanowire transistors; zero-field charge carrier mobility; Electrodes; Electron mobility; Gold; Logic gates; MOSFETs; Materials; MOSFETs; nanoelectronics; nanowires; organic semiconductors;
fLanguage
English
Journal_Title
Nanotechnology, IEEE Transactions on
Publisher
ieee
ISSN
1536-125X
Type
jour
DOI
10.1109/TNANO.2012.2186823
Filename
6145691
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