An antiresonant Fabry-Perot saturable absorber for passive mode-locking fabricated by metal-organic vapor phase epitaxy and ion implantation design, characterization, and mode-locking

Author

Lederer, M.J. ; Luther-Davies, B. ; Tan, H.H. ; Jagadish, C.

Author_Institution

Res. Sch. of Phys. Sci., Australian Nat. Univ., Canberra, ACT, Australia

Volume

34

Issue

11

fYear

1998

fDate

11/1/1998 12:00:00 AM

Firstpage

2150

Lastpage

2161

Abstract

We have fabricated GaAs-based antiresonant Fabry-Perot saturable absorbers (A-FPSAs) for passive mode-locking near infrared solid-state lasers using metal-organic vapor phase epitaxy (MOVPE) growth followed by ion implantation and optional thermal annealing. We present differential reflectivity measurements showing the effect of ion implantation and annealing. The devices were characterized for their large-signal response including saturation fluence, modulation depth, and nonbleachable losses-important parameters for passive mode-locking. Finally, we demonstrate mode-locking using our samples within a Ti:sapphire laser observing stable and reliable self-starting, pulses in the 100-fs range, and 50-nm tunability. Results of computer simulations are in good agreement with the experiments

Keywords

gallium arsenide; high-speed optical techniques; ion implantation; laser accessories; laser mode locking; laser tuning; optical fabrication; optical losses; optical saturable absorption; semiconductor growth; solid lasers; titanium; vapour phase epitaxial growth; 100 fs; GaAs; GaAs-based antiresonant Fabry-Perot saturable absorbers; MOVPE; Ti:sapphire laser; antiresonant Fabry-Perot saturable absorber; computer simulations; differential reflectivity measurements; fs range laser pulses; ion implantation; ion implantation design; large-signal response; laser mode-locking; laser tuning; metal-organic vapor phase epitaxy; modulation depth; near infrared solid-state lasers; nonbleachable losses; passive mode-locking; reliable self-starting; saturation fluence; thermal annealing; Annealing; Epitaxial growth; Epitaxial layers; Fabry-Perot; Ion implantation; Laser mode locking; Laser stability; Optical pulses; Reflectivity; Solid lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.726608

Filename

726608