Title :
An antiresonant Fabry-Perot saturable absorber for passive mode-locking fabricated by metal-organic vapor phase epitaxy and ion implantation design, characterization, and mode-locking
Author :
Lederer, M.J. ; Luther-Davies, B. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Res. Sch. of Phys. Sci., Australian Nat. Univ., Canberra, ACT, Australia
fDate :
11/1/1998 12:00:00 AM
Abstract :
We have fabricated GaAs-based antiresonant Fabry-Perot saturable absorbers (A-FPSAs) for passive mode-locking near infrared solid-state lasers using metal-organic vapor phase epitaxy (MOVPE) growth followed by ion implantation and optional thermal annealing. We present differential reflectivity measurements showing the effect of ion implantation and annealing. The devices were characterized for their large-signal response including saturation fluence, modulation depth, and nonbleachable losses-important parameters for passive mode-locking. Finally, we demonstrate mode-locking using our samples within a Ti:sapphire laser observing stable and reliable self-starting, pulses in the 100-fs range, and 50-nm tunability. Results of computer simulations are in good agreement with the experiments
Keywords :
gallium arsenide; high-speed optical techniques; ion implantation; laser accessories; laser mode locking; laser tuning; optical fabrication; optical losses; optical saturable absorption; semiconductor growth; solid lasers; titanium; vapour phase epitaxial growth; 100 fs; GaAs; GaAs-based antiresonant Fabry-Perot saturable absorbers; MOVPE; Ti:sapphire laser; antiresonant Fabry-Perot saturable absorber; computer simulations; differential reflectivity measurements; fs range laser pulses; ion implantation; ion implantation design; large-signal response; laser mode-locking; laser tuning; metal-organic vapor phase epitaxy; modulation depth; near infrared solid-state lasers; nonbleachable losses; passive mode-locking; reliable self-starting; saturation fluence; thermal annealing; Annealing; Epitaxial growth; Epitaxial layers; Fabry-Perot; Ion implantation; Laser mode locking; Laser stability; Optical pulses; Reflectivity; Solid lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
