Self oscillation at millimeter-wave frequencies and modulation using optoelectronic mixing in a two-heterojunction bipolar photo-transistors configuration

Author

Lasri, Jacob ; Bilenca, Alberto ; Eisenstein, Gadi ; Ritter, Dan ; Orenstein, Meir ; Cohen, Shimon ; Sidorov, Victor

Author_Institution

Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel

Volume

13

Issue

1

fYear

2001

Firstpage

67

Lastpage

69

Abstract

We report an advanced millimeter-wave source comprising two bipolar heterojunction photo transistors: one serving as a self oscillator and the second as an optoelectronic modulator. Optical injection locking of the first as well as analog and digital modulation of the second have been demonstrated.

Keywords

gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave photonics; millimetre wave bipolar transistors; millimetre wave generation; millimetre wave oscillators; modulators; optical modulation; phototransistors; InPInGaAs; advanced millimeter-wave source; analog modulation; bipolar heterojunction photo transistors; digital modulation; millimeter-wave frequencies; modulation; optical injection locking; optoelectronic mixing; optoelectronic modulator; self oscillation; self oscillator; two-heterojunction bipolar photo-transistors configuration; Frequency modulation; Heterojunction bipolar transistors; Injection-locked oscillators; Millimeter wave transistors; Optical attenuators; Optical filters; Optical mixing; Optical modulation; Optical noise; Optical transmitters;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.903223

Filename

903223