DocumentCode
1440372
Title
Hot electron and DX center insensitivity of Al0.25Ga0.75As/GaAs HFET´s designed for microwave power applications
Author
Menozzi, Roberto ; Pavesi, Maura ; Manfredi, Manfredo ; Ghezzi, Carlo ; Lanzieri, Claudio ; Peroni, Marco ; Canali, Claudio
Author_Institution
Dipt. di Ingegneria dell´´Inf., Parma Univ., Italy
Volume
45
Issue
11
fYear
1998
fDate
11/1/1998 12:00:00 AM
Firstpage
2261
Lastpage
2267
Abstract
We show in this work that, although designing AlxGa1-xAs/GaAs HFET´s for microwave power applications requires a large barrier layer bandgap (hence x>0.2), the presence of a large concentration of electrically active DX centers in the barrier layer does not hinder the device reliability. The existence of a remarkable quantity of DX centers in the Al0.25Ga0.75As barrier layer is for the first time revealed by means of room temperature electroluminescence, and their concentration is evaluated by measuring the threshold voltage shift induced by hot electron stress at cryogenic temperatures
Keywords
III-V semiconductors; aluminium compounds; deep levels; electroluminescence; gallium arsenide; hot carriers; impact ionisation; microwave field effect transistors; microwave power transistors; power field effect transistors; semiconductor device reliability; Al0.25Ga0.75As-GaAs; DX center insensitivity; HFETs; barrier layer bandgap; cryogenic temperatures; device reliability; hot electron insensitivity; hot electron stress; microwave power applications; room temperature electroluminescence; threshold voltage shift; Electroluminescence; Electrons; Gallium arsenide; HEMTs; MODFETs; Microwave devices; Photonic band gap; Stress measurement; Temperature; Voltage measurement;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.726636
Filename
726636
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