• DocumentCode
    1440408
  • Title

    A Solar-Blind \\beta -Ga _2 O _</h1></div></div>
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            <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Author</span></div><div class='col-12 col-md-9 leftDirection leftAlign'><h2 class='mb-0 fw-semibold'>Weng, W.Y. ; Hsueh, T.J. ; Chang, S.J. ; Huang, G.J. ; Chang, S.P.</h2></div></div>
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            <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Author_Institution</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan</div></div>
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            <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Volume</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>22</div></div>
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            <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Issue</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>10</div></div>
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            <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>fYear</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>2010</div></div>
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            <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>fDate</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>5/15/2010 12:00:00 AM</div></div>
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            <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Firstpage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>709</div></div>
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            <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Lastpage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>711</div></div>
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            <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Abstract</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>The authors report the growth of ??-Ga<sub>2</sub>O<sub>3</sub> nanowires by heating the GaN-sapphire template and the fabrication of a ??-Ga<sub>2</sub>O<sub>3</sub> nanowire photodetector by depositing interdigitated contact electrodes. It was found that the average length and diameter of the ??-Ga<sub>2</sub>O<sub>3</sub> nanowires were around 10 ??m and 100 nm, respectively. It was also found that the fabricated photodetector was solar-blind with sharp cutoff at 255 nm. With an incident light wavelength of 255 nm and an applied bias of 10 V, it was found that measured responsivity of the photodetector was 8.0 x 10<sup>-4</sup> A/W.</div></div>
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            <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Keywords</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>electrodes; gallium compounds; nanowires; photodetectors; sapphire; Ga<sub>2</sub>O<sub>3</sub>; GaN-Al<sub>2</sub>O<sub>3</sub>; incident light; interdigitated contact electrode; size 255 nm; solar blind nanowire photodetector; voltage 10 V; <formula formulatype= $beta$- ${hbox {Ga}}_{2} hbox{O} _{3}$; nanowires; photodetector; solar-blind;

  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2010.2044570
  • Filename
    5430939